ret y rt - glass passivated junction chip - ideal for automated placement - low profile package - ultra fast recovery time for high efficiency - halogen-free according to iec 61249-2-21 definition v rrm v v rms v v dc v i f(av) a trr ns cj pf t j o c t stg o c document number ds_d1309020 version:e13 note 3: measured at 1 mhz and applied reverse voltage of 4.0v d.c. operating junction temperature range - 55 to + 175 storage temperature range - 55 to + 175 note 1 pulse test with pw=300u sec, 1% duty cycle note 2: reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a typical junction capacitance (note 3) 25 typical thermal resistance r jl r ja 2075 o c/w maximum reverse current @ rated vr t j =25 t j =125 i r 2 ua 50 maximum reverse recovery time (note 2) 20 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 60 a maximum instantaneous forward voltage (note 1) @ 2 a v f 0.90 v maximum dc blocking voltage 100 150 200 maximum average forward rectified current 2 maximum repetitive peak reverse voltage 100 150 200 maximum rms voltage 70 105 140 weight 0.09 gram (approximately) m ax i m u m rat i n gs an d elect ri cal ch aract erst i cs (t a =25 unless otherwise noted) param et er sy m bol esh 2 b esh 2 c esh 2 d u n i t m ech an i cal dat a case do-214aa(smb) do-214aa(smb) molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free, rohs compliant terminal matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test polarity indicated by cathode band ESH2B thru esh2d taiwan semiconductor surface mount ultra fast rectifiers feat u res - moisture sensitivity: level 1, per j-std-020 - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec downloaded from: http:///
part n o. note 1: "x" defines voltage from 100v (ESH2B) to 200v (esh2d) part n o. esh2d esh2d (ta=25 unless otherwise noted) document number ds_d1309020 version:e13 orderi n g i n form at i on ex am ple taiwan semiconductor rat i n gs an d ch aract eri st i cs cu rv es esh2d r5 r5 esh2d r5g r5 g green compound smb 3000 / 13" plastic reel preferred p/n pack i n g code green com pou n d code descri pt i on esh2x (note 1) r5 suffix "g" smb 850 / 7" plastic reel r4 smb 3000 / 13" paper reel m4 ESH2B thru esh2d pack i n g code green com pou n d code pack age pack i n g 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 175 average forward current (a) lead temperature ( o c) fig.1 forward current derating curve resister or inductive load 0 10 20 30 40 50 60 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 3 maximum non-repetitive forward surge current 8.3ms single half sine wave jedec method 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse current (ua) percent of rated peak reverse voltage (%) fig. 2 typical reverse characteristics tj=25 tj=125 0.1 1 10 100 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 instantaneous forward current (a) forward voltage (v) fig. 4 typical forward characteristics pulse width=300us 1% duty cycle downloaded from: http:///
min max min max a 1.95 2.10 0.077 0.083 b 4.25 4.75 0.167 0.187 c 3.48 3.73 0.137 0.147 d 1.99 2.61 0.078 0.103 e 0.90 1.41 0.035 0.056 f 5.10 5.30 0.201 0.209 g 0.10 0.20 0.004 0.008 h 0.15 0.31 0.006 0.012 p/n = specific device code g = green compound yw = date code f = factory code document number ds_d1309020 version:e13 m ark i n g di agram c4 . 3 d1 . 8 e6 . 8 su ggest ed pad lay ou t symbol unit(mm) a2 . 3 b2 . 5 ESH2B thru esh2d taiwan semiconductor pack age ou t li n e di m en si on s dim. unit(mm) unit(inch) 0 10 20 30 40 50 60 0.1 1 10 100 capacitance (pf) reverse voltage (v) fig. 5 typical junction capacitance downloaded from: http:///
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